Title :
Numerical analysis of ultra-small MOSFETs characteristics
Author :
Ezaki, T. ; Nakamura, H. ; Yamamoto, T. ; Ikezawa, T. ; Hane, M.
Author_Institution :
Syst. Devices Res. Labs., NEC Corp., Sagamihara, Japan
Abstract :
We have evaluated device characteristics fluctuations of deep sub-100nm CMOS devices induced by the statistical nature of the number and position of discrete dopant atoms. Our analysis showed that the threshold voltage fluctuation was several tens of millivolt in ultra-small MOSFETs. We also analyzed inversion carrier mobility considering carrier quantization.
Keywords :
MOSFET; carrier mobility; semiconductor doping; statistical analysis; 100 nm; CMOS devices; MOSFET characteristics; carrier quantization; device characteristics; discrete dopant atoms; inversion carrier mobility; numerical analysis; threshold voltage fluctuation; ultra-small MOSFET; Atomic layer deposition; Charge carrier processes; Fluctuations; Ion implantation; MOSFET circuits; Numerical analysis; Optical scattering; Rough surfaces; Surface roughness; Threshold voltage;
Conference_Titel :
Future of Electron Devices, 2004. International Meeting for
Print_ISBN :
0-7803-8423-7
Electronic_ISBN :
0-7803-8424-5
DOI :
10.1109/IMFEDK.2004.1566430
