DocumentCode
2874345
Title
Numerical analysis of ultra-small MOSFETs characteristics
Author
Ezaki, T. ; Nakamura, H. ; Yamamoto, T. ; Ikezawa, T. ; Hane, M.
Author_Institution
Syst. Devices Res. Labs., NEC Corp., Sagamihara, Japan
fYear
2004
fDate
26-28 July 2004
Firstpage
105
Lastpage
106
Abstract
We have evaluated device characteristics fluctuations of deep sub-100nm CMOS devices induced by the statistical nature of the number and position of discrete dopant atoms. Our analysis showed that the threshold voltage fluctuation was several tens of millivolt in ultra-small MOSFETs. We also analyzed inversion carrier mobility considering carrier quantization.
Keywords
MOSFET; carrier mobility; semiconductor doping; statistical analysis; 100 nm; CMOS devices; MOSFET characteristics; carrier quantization; device characteristics; discrete dopant atoms; inversion carrier mobility; numerical analysis; threshold voltage fluctuation; ultra-small MOSFET; Atomic layer deposition; Charge carrier processes; Fluctuations; Ion implantation; MOSFET circuits; Numerical analysis; Optical scattering; Rough surfaces; Surface roughness; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Future of Electron Devices, 2004. International Meeting for
Print_ISBN
0-7803-8423-7
Electronic_ISBN
0-7803-8424-5
Type
conf
DOI
10.1109/IMFEDK.2004.1566430
Filename
1566430
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