Title :
Numerical simulation of MOS capacitance for a wide range of temperatures, impurity profiles and surface state densities
Author :
Jaeger, Richard C. ; Diehl, Stephan ; Gaensslen, F.
Author_Institution :
Auburn University, Auburn, AL, USA
Abstract :
This report will describe a method for the numerical evaluation of the capacitance of MOS structures as a function of temperature for arbitrary impurity profiles and surface state distributions.
Keywords :
Capacitance; Capacitance-voltage characteristics; Difference equations; Differential equations; Electrons; MOS devices; Numerical simulation; Poisson equations; Semiconductor impurities; Temperature distribution;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1982 IEEE International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/ISSCC.1982.1156349
