DocumentCode :
2874376
Title :
The application of delta-doping in heterojunction bipolar transistors
Author :
Chen, H.R. ; Lee, C.P. ; Huang, C.H. ; Chang, C.Y. ; Tsang, J.S. ; Tsai, K.L.
Author_Institution :
National Chiao Tung University
fYear :
1994
fDate :
1994
Firstpage :
39997
Lastpage :
41458
Keywords :
Bipolar transistors; Circuits; DH-HEMTs; Doping; Electrons; Heterojunction bipolar transistors; Indium phosphide; Material storage; Narrowband; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
Type :
conf
DOI :
10.1109/EDMS.1994.771251
Filename :
771251
Link To Document :
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