Title :
Time-resolved x-ray absorption spectroscopy at the silicon L- and K-edge with 20 fs resolution
Author :
Seres, Eniko ; Spielmann, Christian
Author_Institution :
Dept. of Phys. I, Univ. Wurzburg, Wurzburg
Abstract :
We report a measurement of the modification of the x-ray absorption spectrum near the L and K edges of Silicon after excitation with near IR pulses. The estimated temporal resolution is better than 20 fs.
Keywords :
X-ray absorption spectra; elemental semiconductors; silicon; time resolved spectra; Si; X-ray absorption spectroscopy; X-ray absorption spectrum; near infrared pulses; silicon K-edge; silicon L-edge; temporal resolution; time-resolved spectroscopy; Electromagnetic wave absorption; Laser excitation; Optical harmonic generation; Optical pulses; Pulse amplifiers; Pulse measurements; Silicon; Spectroscopy; Ultrafast optics; X-ray lasers; (140.7240) UV, XUV, and X-ray lasers; (190.4160) Multiharmonic generation; (260.7200) Ultraviolet, extreme; (300.6560) Spectroscopy, x-ray; (340.7480) X-rays;
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
DOI :
10.1109/CLEO.2006.4628440
