Title :
Ion-implanted GaAs MESFET´s with W/WNx bi-layer gate designs
Author :
Yeh, Tzu-Jin ; Chan, Yi-Jen ; Gan, Tien-Huat
Author_Institution :
National Central University
Keywords :
Conductivity; Gallium arsenide; Inorganic materials; MESFETs; Optical films; Radio frequency; Schottky diodes; Sheet materials; Stress; Temperature;
Conference_Titel :
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
DOI :
10.1109/EDMS.1994.771264
