Title :
Material and structure design for advanced CMOS channels
Author :
Takagi, Shin-ichi
Author_Institution :
National Inst. of Adv. Ind. Sci. & Technol., Kawasaki, Japan
Abstract :
This paper reviews recent our studies of CMOS channels based on the concept of subband structure engineering. This device design concept can be applied to strained-Si channel MOSFETs, ultra-thin SOI MOSFETs and Ge-on-insulator (GOI) MOSFETs. As for the electron mobility enhancement, an important factor is the introduction of larger subband energy splitting between the 2-fold and the 4-fold valleys on a (100) surface, which can be obtained in strained-Si and ultra-thin body (UTB) channels based in S. Takagi et al. (1997).
Keywords :
CMOS integrated circuits; MOSFET; electron mobility; germanium; silicon; silicon-on-insulator; GOI MOSFET; advanced CMOS channels; electron mobility enhancement; material design; structure design; subband energy splitting; subband structure engineering; ultra-thin SOI MOSFET; ultra-thin body channels; CMOS technology; Charge carrier processes; Electron mobility; Informatics; MOSFETs; Materials science and technology; Particle scattering; Power engineering and energy; Silicon on insulator technology; Very large scale integration;
Conference_Titel :
Future of Electron Devices, 2004. International Meeting for
Print_ISBN :
0-7803-8423-7
Electronic_ISBN :
0-7803-8424-5
DOI :
10.1109/IMFEDK.2004.1566436
