DocumentCode
2874432
Title
Material and structure design for advanced CMOS channels
Author
Takagi, Shin-ichi
Author_Institution
National Inst. of Adv. Ind. Sci. & Technol., Kawasaki, Japan
fYear
2004
fDate
26-28 July 2004
Firstpage
117
Lastpage
118
Abstract
This paper reviews recent our studies of CMOS channels based on the concept of subband structure engineering. This device design concept can be applied to strained-Si channel MOSFETs, ultra-thin SOI MOSFETs and Ge-on-insulator (GOI) MOSFETs. As for the electron mobility enhancement, an important factor is the introduction of larger subband energy splitting between the 2-fold and the 4-fold valleys on a (100) surface, which can be obtained in strained-Si and ultra-thin body (UTB) channels based in S. Takagi et al. (1997).
Keywords
CMOS integrated circuits; MOSFET; electron mobility; germanium; silicon; silicon-on-insulator; GOI MOSFET; advanced CMOS channels; electron mobility enhancement; material design; structure design; subband energy splitting; subband structure engineering; ultra-thin SOI MOSFET; ultra-thin body channels; CMOS technology; Charge carrier processes; Electron mobility; Informatics; MOSFETs; Materials science and technology; Particle scattering; Power engineering and energy; Silicon on insulator technology; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Future of Electron Devices, 2004. International Meeting for
Print_ISBN
0-7803-8423-7
Electronic_ISBN
0-7803-8424-5
Type
conf
DOI
10.1109/IMFEDK.2004.1566436
Filename
1566436
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