• DocumentCode
    2874479
  • Title

    In0.29Al0.71As/In0.3Ga0.7As heterostructure field-effect transistors fabricated on GaAs substrates

  • Author

    Chan, Yi-Jen ; Yang, Ming-Ta ; Wu, Chia-Song ; Chyi, Jen-Inn

  • Author_Institution
    National Central University
  • fYear
    1994
  • fDate
    1994
  • Firstpage
    44748
  • Lastpage
    45844
  • Keywords
    Conductivity; Current density; Cutoff frequency; Density measurement; FETs; Gallium arsenide; HEMTs; MODFETs; Transconductance; mHEMTs;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
  • Type

    conf

  • DOI
    10.1109/EDMS.1994.771266
  • Filename
    771266
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2874479