Fabrication of 3D microstructures and microactuators on (100) SOI wafer using the DAWN process

Author

Chu, Huai-Yuan ; Fang, Weileun

Author_Institution

Dept. of Power Mech. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan

fYear

2004

fDate

2004

Firstpage

753

Lastpage

756

Abstract

This study has successfully demonstrated a DRIE assisted wet anisotropic bulk micromachining (DAWN process) to fabricate various three-dimensional MEMS devices on SOI wafer. The DAWN process can offer thin film structure, reinforced (thin film) structure, and thick structure with totally different mechanical characteristics. The thin film structure has small stiffness and mass, whereas the thick structure has large stiffness and mass. The reinforced structure has small mass but large stiffness. Since these structures can be fabricated and integrated using the DAWN process, various applications become available.

Keywords

elastic constants; elemental semiconductors; microactuators; micromachining; semiconductor thin films; silicon compounds; silicon-on-insulator; sputter etching; 3D microstructures fabrication; DAWN process; SOI wafer; Si-SiO₂; deep RIE; microactuators; silicon on insulator; sputter etching; stiffness; thin film structure; wet anisotropic bulk micromachining; Fabrication; Microactuators; Microelectromechanical devices; Micromachining; Microstructure; Semiconductor thin films; Silicon devices; Thin film devices; Transistors; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems, 2004. 17th IEEE International Conference on. (MEMS)

Print_ISBN

0-7803-8265-X

Type

conf

DOI

10.1109/MEMS.2004.1290694

Filename

1290694