Body bias controlled SOI technology with HTI

As the LSI process technology advances, increase of power consumption for the LSIs becomes major issue because of number of transistors and clock frequencies increase. For a reduction of the power consumption of the LSI, lowering supply voltage technology is one of the effective ways such as applying a dynamic threshold voltage (DT) structure as stated in J. P. Colinge (1987). However, a DT SOI MOSFET with T-shape or H-shape gates has disadvantages of area penalties and a gate parasitic capacitance increase. In this paper we describe actively body-bias controlled (ABC) SOI MOSFET technology with hybrid trench isolation (HTI) based in Y. Hirano et al. (2000). This structure doesn´t need the T or H gates and realizes low-voltage and high-speed operation with controlling a body potential.