DocumentCode
2874628
Title
The characteristics of ammonia-annealed polysilicon thin-film transistors with plasma hydrogenation
Author
Yang, Chien Kuo ; Lei, Tan Fu ; Lee, Chung Len
Author_Institution
National Chiao Tung University
fYear
1994
fDate
1994
Firstpage
42952
Lastpage
44048
Keywords
Annealing; Degradation; Dielectrics; Leakage current; Nitrogen; Plasma applications; Plasma devices; Plasma properties; Thin film transistors; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
Type
conf
DOI
10.1109/EDMS.1994.771273
Filename
771273
Link To Document