Title :
Ultra shallow n/sup+//p junctions formed by out-diffusion from TiSi2 with an amorphous silicon buffer layer
Author :
Huang, Cheng Tung ; Yang, Wen Luh ; Shieh, Tsong Min ; Lei, Tan Fu
Author_Institution :
National Chiao Tung University
Keywords :
Annealing; Buffer layers; Conductivity; Contact resistance; Diodes; Electric variables; Leakage current; Silicidation; Silicides; Silicon;
Conference_Titel :
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
DOI :
10.1109/EDMS.1994.771275