DocumentCode :
2874652
Title :
Ultra shallow n/sup+//p junctions formed by out-diffusion from TiSi2 with an amorphous silicon buffer layer
Author :
Huang, Cheng Tung ; Yang, Wen Luh ; Shieh, Tsong Min ; Lei, Tan Fu
Author_Institution :
National Chiao Tung University
fYear :
1994
fDate :
1994
Firstpage :
45876
Lastpage :
46606
Keywords :
Annealing; Buffer layers; Conductivity; Contact resistance; Diodes; Electric variables; Leakage current; Silicidation; Silicides; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
Type :
conf
DOI :
10.1109/EDMS.1994.771275
Filename :
771275
Link To Document :
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