• DocumentCode
    2874666
  • Title

    The effects of crystallinity and thickness of silicide layer and substrate orientation on the oxidation of NiSi2 on silicon

  • Author

    Huang, G.J. ; Chen, L.J.

  • Author_Institution
    National Tsing Hua University
  • fYear
    1994
  • fDate
    1994
  • Firstpage
    46973
  • Lastpage
    11543
  • Keywords
    Atomic layer deposition; Crystallization; Kinetic theory; Nickel; Oxidation; Semiconductor films; Silicides; Silicon; Substrates; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
  • Type

    conf

  • DOI
    10.1109/EDMS.1994.771276
  • Filename
    771276
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2874666