Title :
The effects of crystallinity and thickness of silicide layer and substrate orientation on the oxidation of NiSi2 on silicon
Author :
Huang, G.J. ; Chen, L.J.
Author_Institution :
National Tsing Hua University
Keywords :
Atomic layer deposition; Crystallization; Kinetic theory; Nickel; Oxidation; Semiconductor films; Silicides; Silicon; Substrates; Temperature;
Conference_Titel :
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
DOI :
10.1109/EDMS.1994.771276
