Title :
A comparative study of positive and negative bias temperature instabilities in MOSFETs
Author :
Zhang, J.F. ; Eccleston, W.
Author_Institution :
Liverpool John Moores University
Keywords :
Annealing; Contamination; Degradation; Hot carriers; MOSFETs; Negative bias temperature instability; Niobium compounds; Pollution measurement; Testing; Titanium compounds;
Conference_Titel :
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
DOI :
10.1109/EDMS.1994.771280
