Self-powered IC-compatible DC bias for electrostatic resonators

Author

Kan, Shyi-Hemg ; Lal, Amit

Author_Institution

Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA

fYear

2004

fDate

2004

Firstpage

817

Lastpage

820

Abstract

Electrostatic micro actuators require DC bias, for electromechanical coupling. This paper presents an IC compatible self-powered voltage bias generator that uses radioactive ⁶³Ni thin film and a tunneling oxide-diode. The relatively high voltage bias (10-20 volts) is achieved, by charging a tunneling oxide diode with electrons from a beta particle-emitting thin film. Constant voltage is obtained when the rate of beta particle collection equals the rate of electrons leaking through the oxide diode. Shifts in a clamped-clamped beam resonator are measured as the bias voltage is applied under the resonator.

Keywords

electrostatic actuators; metallic thin films; micromechanical resonators; nickel; resonators; 10 to 20 V; IC-compatible DC bias; Ni; beta particle-emitting thin film; bias voltage; clamped clamped beam resonator; clamped-clamped beam resonator; electromechanical coupling; electrons leakage; electrostatic micro actuators; electrostatic resonators; radioactive ⁶³Ni thin film; tunneling oxide diode; tunneling oxide-diode; voltage bias generator; Aluminum; Beta rays; Diodes; Electrons; Electrostatics; Low voltage; Micromechanical devices; Transistors; Tunneling; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems, 2004. 17th IEEE International Conference on. (MEMS)

Print_ISBN

0-7803-8265-X

Type

conf

DOI

10.1109/MEMS.2004.1290710

Filename

1290710