Title :
Design of c+-implantation conditions by TRIM calculation for ion beam defect engineering in Ge+preamorphized and BF2+-implanted silicon
Author :
Chu, C.H. ; Ho, KJ ; Ling, Y.C.
Author_Institution :
National Tsing Hua University
Keywords :
Amorphous materials; Annealing; Boron; Design engineering; Implants; Ion beams; Ion implantation; Power engineering and energy; Production; Silicon;
Conference_Titel :
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
DOI :
10.1109/EDMS.1994.771282
