DocumentCode :
2874833
Title :
Change of 1/f noise in MOSFETS due to degradation
Author :
Li, Xiaosong ; Vandamme, L.K.J.
Author_Institution :
University of Technology
fYear :
1994
fDate :
1994
Firstpage :
12305
Lastpage :
13401
Keywords :
Degradation; Electric resistance; Electron traps; Hot carriers; MOSFETs; Noise measurement; Optical noise; Stress measurement; Surface resistance; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
Type :
conf
DOI :
10.1109/EDMS.1994.771284
Filename :
771284
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2874833
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