DocumentCode
2874833
Title
Change of 1/f noise in MOSFETS due to degradation
Author
Li, Xiaosong ; Vandamme, L.K.J.
Author_Institution
University of Technology
fYear
1994
fDate
1994
Firstpage
12305
Lastpage
13401
Keywords
Degradation; Electric resistance; Electron traps; Hot carriers; MOSFETs; Noise measurement; Optical noise; Stress measurement; Surface resistance; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
Type
conf
DOI
10.1109/EDMS.1994.771284
Filename
771284
Link To Document