Title :
Test/characterization procedures for high density silicon RAMs
Author :
Gangatirkar, P. ; Presson, R. ; Rosner, L.
Author_Institution :
IBM Corp., Essex Junction, VT, USA
Abstract :
Diagnostic procedures which identify and quantify circuit marginalities and process sensitivities of DRAMs will be discussed. The use of fail counts, bit fail maps and parametric data in the development of the 32, 36 and 64Kb RAMs will be described.
Keywords :
Aluminum; Circuit testing; Computer aided software engineering; Failure analysis; Pattern analysis; Pattern recognition; Random access memory; Research and development; Silicon; System testing;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1982 IEEE International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/ISSCC.1982.1156387
