DocumentCode
2875051
Title
Test/characterization procedures for high density silicon RAMs
Author
Gangatirkar, P. ; Presson, R. ; Rosner, L.
Author_Institution
IBM Corp., Essex Junction, VT, USA
Volume
XXV
fYear
1982
fDate
10-12 Feb. 1982
Firstpage
62
Lastpage
63
Abstract
Diagnostic procedures which identify and quantify circuit marginalities and process sensitivities of DRAMs will be discussed. The use of fail counts, bit fail maps and parametric data in the development of the 32, 36 and 64Kb RAMs will be described.
Keywords
Aluminum; Circuit testing; Computer aided software engineering; Failure analysis; Pattern analysis; Pattern recognition; Random access memory; Research and development; Silicon; System testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1982 IEEE International
Conference_Location
San Francisco, CA, USA
Type
conf
DOI
10.1109/ISSCC.1982.1156387
Filename
1156387
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