Title :
A 288Kb dynamic RAM
Author :
Fitzgerald, Brian ; Thoma, E.
Author_Institution :
IBM Corp., Essex Junction, VT, USA
Abstract :
A 288Kb random access memory, organized as 32K bytes (9b per byte) with one byte being accessed during every read or write cycle, will be discussed. The chip can be fabricated using current silicon and aluminum metal-oxide-semiconductor technology, applying 2μ ground rules and 1.0μ overlay tolerances.
Keywords :
Clocks; DRAM chips; Decoding; Latches; Silicon; Timing;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1982 IEEE International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/ISSCC.1982.1156390
