DocumentCode :
2875142
Title :
Investigation of InGaAsP Transition layers for Aluminum-free InGaAs/GaAs/InGaP Strained- Quantum-Well Lasers
Author :
Hung-Pin ; Lin, Wei ; Chen, Jian-Guang ; Tu, Yuan-Kuang ; Lee, Ching-Ting
Author_Institution :
Photonic Technology Research
fYear :
1994
fDate :
1994
Firstpage :
47430
Lastpage :
11635
Keywords :
Erbium-doped fiber lasers; Gallium arsenide; Indium gallium arsenide; Laser transitions; Optical waveguides; Pump lasers; Quantum well lasers; Substrates; Temperature; Waveguide lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
Type :
conf
DOI :
10.1109/EDMS.1994.771301
Filename :
771301
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2875142
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