DocumentCode :
2875151
Title :
Fabrication and characterization of LPE-grown, erbium-doped InGaAs PIN photodiodes
Author :
Ho, Wen-Jeng ; Tu, Yuan-Kuang ; Lin, Wei ; Shih, Hung-Hui ; Dai, Ting-Am ; Wu, Meng-Chyi
Author_Institution :
National Tsing Hua University
fYear :
1994
fDate :
1994
Firstpage :
12002
Lastpage :
16750
Keywords :
Chemical elements; Epitaxial growth; Erbium; Fabrication; Gettering; Impurities; Indium gallium arsenide; Indium phosphide; Luminescence; PIN photodiodes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
Type :
conf
DOI :
10.1109/EDMS.1994.771302
Filename :
771302
Link To Document :
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