Molecular beam epitaxy regrowth of pseudomorphic high electron mobility transistors using thin in layer

Author

Peng, C.K. ; Lan, W.H. ; Chen, S.S. ; Tu, S.L. ; Yang, S.J.

Author_Institution

Chung-shang Institute of Sci. & Technology

fYear

1994

fDate

1994

Firstpage

13463

Lastpage

14193

Keywords

Atmosphere; Buffer layers; Electron mobility; Gallium arsenide; HEMTs; MODFETs; Molecular beam epitaxial growth; PHEMTs; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International

Type

DOI

10.1109/EDMS.1994.771303

Filename

771303

Link To Document