Title :
AlGaAs/GaAs heterojunction bipolar transistors with shifted junction
Author :
Chen, H.R. ; Chang, C.Y. ; Huang, C.H. ; Tsai, K.L. ; Tsang, J.S. ; Lee, C.P.
Author_Institution :
National Chiao Tung University
Keywords :
Analytical models; Bipolar transistors; Capacitance; Doping; Electrons; Gallium arsenide; Heterojunction bipolar transistors; P-n junctions; Stability analysis; Voltage;
Conference_Titel :
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
DOI :
10.1109/EDMS.1994.771308
