DocumentCode :
2875292
Title :
Epitaxial growth of AlAsxSb1-x by MOCVD
Author :
Chen, Wei-Kuo ; Ou, Jehn
Author_Institution :
Chiao-Tung University
fYear :
1994
fDate :
1994
Firstpage :
21505
Lastpage :
22601
Keywords :
Chemical vapor deposition; Epitaxial growth; III-V semiconductor materials; Indium phosphide; Optical films; Optical microscopy; Optoelectronic devices; Scanning electron microscopy; Solids; Temperature dependence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
Type :
conf
DOI :
10.1109/EDMS.1994.771313
Filename :
771313
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2875292
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