Title :
Deep center defects in AlGaAs/GaAs GRIN-SCH-SQW lasers fabricated by MBE and MOCVD
Author :
Liwu, Lu ; Jie, Zhou ; Songlin, Feng
Author_Institution :
National Laboratory for Superlattices and Microstructures
Keywords :
Electron traps; Epitaxial layers; Gallium arsenide; MOCVD; Molecular beam epitaxial growth; Semiconductor lasers; Spectroscopy; Substrates; Temperature distribution; Temperature sensors;
Conference_Titel :
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
DOI :
10.1109/EDMS.1994.771316
