DocumentCode
2875362
Title
A 40ns CMOS E2PROM
Author
Stewart, R. ; Plus, D.
Author_Institution
RCA Laboratories, Somerville, NJ
Volume
XXV
fYear
1982
fDate
10-12 Feb. 1982
Firstpage
110
Lastpage
111
Abstract
This Paper will report on an 8K CMOS/SOS E2PROM with an access time of 38ns at 5V, 60mW power dissipation and write voltage as low as 12V.
Keywords
CMOS memory circuits; CMOS process; Decoding; Delay; Low voltage; Power dissipation; Pulse amplifiers; Ring oscillators; Solid state circuits; Space vector pulse width modulation;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1982 IEEE International
Conference_Location
San Francisco, CA, USA
Type
conf
DOI
10.1109/ISSCC.1982.1156402
Filename
1156402
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