DocumentCode :
2875378
Title :
A 16K E2PROM
Author :
Yaron, G. ; Ebel, M. ; Prasad, Jagadish ; Leong, Ben
Author_Institution :
National Semiconductor Corp., Santa Clara, CA, USA
Volume :
XXV
fYear :
1982
fDate :
10-12 Feb. 1982
Firstpage :
108
Lastpage :
109
Abstract :
A 16K floating-gate thin oxide (<150Å) E2PROM utilizing a single direct wafer stepper masking step for the definition of the electron tunneling area ( 
) will be discussed. Device requires only a dc level Vpp signal for its operation and features threshold bit mapping.
) will be discussed. Device requires only a dc level VKeywords :
Nonvolatile memory; Writing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1982 IEEE International
Conference_Location :
San Francisco, CA, USA
Type :
conf
DOI :
10.1109/ISSCC.1982.1156403
Filename :
1156403
Link To Document :
