DocumentCode :
2875474
Title :
A nitride-barrier avalanche-injection EAROM
Author :
Hijiya, S. ; Ito, Takao ; Nakamura, T. ; Ishikawa, Hiroshi ; Arakawa, H.
Author_Institution :
Fujitsu Laboratories, Inc., and Fujitsu Ltd., Kawasaki, Japan
Volume :
XXV
fYear :
1982
fDate :
10-12 Feb. 1982
Firstpage :
116
Lastpage :
117
Abstract :
This report will cover a single 15V supply 2Kb EAROM with low voltage alterability achieved by the use of thermal nitride and a single polarity floating gate injection approach.
Keywords :
EPROM; Energy barrier; Hot carriers; Insulation; Ion implantation; Low voltage; Nonvolatile memory; Photonic band gap; Silicon; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1982 IEEE International
Conference_Location :
San Francisco, CA, USA
Type :
conf
DOI :
10.1109/ISSCC.1982.1156409
Filename :
1156409
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2875474
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