• DocumentCode
    2875832
  • Title

    Optical mixing in InP-based high-electron mobility transistors by use of a focused laser beam

  • Author

    Murata, Hiroshi ; Kobayashi, Noyiyo ; Okamura, Yasuyuki ; Kosugi, Toshihiko ; Enoki, Takatomo

  • Author_Institution
    Grad. Sch. of Eng. Sci., Osaka Univ., Toyonaka
  • fYear
    2006
  • fDate
    21-26 May 2006
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Optical mixing in InP-based ultra-fast high-electron mobility transistors (HEMTs) using a focused laser beam onto the surface was studied in detail. Position-dependent optical responses in the HEMT and optical signal detection at 10 GHz were demonstrated.
  • Keywords
    III-V semiconductors; high electron mobility transistors; indium compounds; laser beams; microwave photonics; optical focusing; optical signal detection; HEMT; InP; focused laser beam; optical mixing; optical signal detection; position-dependent optical responses; ultra-fast high-electron mobility transistors; Electrodes; HEMTs; Laser beams; Laser transitions; MODFETs; Masers; Optical beams; Optical mixing; Optical modulation; Surface emitting lasers; (230.5160) Photodetectors; (250.0250) Optoelectronics; (350.4010) Microwaves;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
  • Conference_Location
    Long Beach, CA
  • Print_ISBN
    978-1-55752-813-1
  • Electronic_ISBN
    978-1-55752-813-1
  • Type

    conf

  • DOI
    10.1109/CLEO.2006.4628521
  • Filename
    4628521
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2875832