Title :
Optical mixing in InP-based high-electron mobility transistors by use of a focused laser beam
Author :
Murata, Hiroshi ; Kobayashi, Noyiyo ; Okamura, Yasuyuki ; Kosugi, Toshihiko ; Enoki, Takatomo
Author_Institution :
Grad. Sch. of Eng. Sci., Osaka Univ., Toyonaka
Abstract :
Optical mixing in InP-based ultra-fast high-electron mobility transistors (HEMTs) using a focused laser beam onto the surface was studied in detail. Position-dependent optical responses in the HEMT and optical signal detection at 10 GHz were demonstrated.
Keywords :
III-V semiconductors; high electron mobility transistors; indium compounds; laser beams; microwave photonics; optical focusing; optical signal detection; HEMT; InP; focused laser beam; optical mixing; optical signal detection; position-dependent optical responses; ultra-fast high-electron mobility transistors; Electrodes; HEMTs; Laser beams; Laser transitions; MODFETs; Masers; Optical beams; Optical mixing; Optical modulation; Surface emitting lasers; (230.5160) Photodetectors; (250.0250) Optoelectronics; (350.4010) Microwaves;
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
DOI :
10.1109/CLEO.2006.4628521
