Title :
A battery backup 64K CMOS RAM with double level aluminum technology
Author :
Watanabe, Toshio ; Hayashi, Mariko ; Sasaki, Innan ; Akatsuka, Y. ; Tsujide, T. ; Yamamoto, Hiroshi ; Osamu Kudoh ; Takahashi, Satoshi ; Hara, Tenshi
Author_Institution :
Nippon Electric Co., Ltd., Kawasaki, Japan
Abstract :
A 10mW 64K CMOS RAM with auto data retention mode will be described. The RAM was fabricated with a double-level aluminum process technology. To reduce active power, a split power control technique was employed. The address access time is 80ns.
Keywords :
Aluminum; Batteries; CMOS memory circuits; CMOS technology; Decoding; Detectors; Power dissipation; Power supplies; Random access memory; Read-write memory;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1983 IEEE International
Conference_Location :
New York, NY, USA
DOI :
10.1109/ISSCC.1983.1156429
