• DocumentCode
    2875959
  • Title

    +5V-only 32K EEPROM

  • Author

    Donaldson, D. ; Honnigford, E. ; Toth, Laszlo

  • Author_Institution
    NCR Microelectronics Division, Maimisburg, OH, USA
  • Volume
    XXVI
  • fYear
    1983
  • fDate
    23-25 Feb. 1983
  • Firstpage
    168
  • Lastpage
    169
  • Abstract
    This paper will cover a 42,000 mil25V-only 4K×8 EEPROM supporting a page load mode. A 0.39 mil2memory cell has been achieved using a double poly SNOS memory structure, 4μm channel lengths and diffused source drains.
  • Keywords
    Circuits; Decoding; EPROM; Low voltage; Nonvolatile memory; Random access memory; Read-write memory; Temperature distribution; Testing; Tires;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1983 IEEE International
  • Conference_Location
    New York, NY, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1983.1156437
  • Filename
    1156437
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2875959