DocumentCode :
2875959
Title :
+5V-only 32K EEPROM
Author :
Donaldson, D. ; Honnigford, E. ; Toth, Laszlo
Author_Institution :
NCR Microelectronics Division, Maimisburg, OH, USA
Volume :
XXVI
fYear :
1983
fDate :
23-25 Feb. 1983
Firstpage :
168
Lastpage :
169
Abstract :
This paper will cover a 42,000 mil25V-only 4K×8 EEPROM supporting a page load mode. A 0.39 mil2memory cell has been achieved using a double poly SNOS memory structure, 4μm channel lengths and diffused source drains.
Keywords :
Circuits; Decoding; EPROM; Low voltage; Nonvolatile memory; Random access memory; Read-write memory; Temperature distribution; Testing; Tires;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1983 IEEE International
Conference_Location :
New York, NY, USA
Type :
conf
DOI :
10.1109/ISSCC.1983.1156437
Filename :
1156437
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2875959
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