DocumentCode :
2876028
Title :
A 16ns 16K bipolar RAM
Author :
Kato, Yu ; Odaka, M. ; Ogiue, K. ; Miwa, H. ; Matsumura, Kohei
Author_Institution :
Hitachi Development Center, Tokyo, Japan
Volume :
XXVI
fYear :
1983
fDate :
23-25 Feb. 1983
Firstpage :
106
Lastpage :
107
Abstract :
A 16ns 150mW ECL compatible static RAM will be described. Cell and die size of 569μm2and 16.4mm2have been achieved with oxide-isolated poly silicon-walled emitter transistors.
Keywords :
Capacitance; Frequency; Iron; MOS devices; Random access memory; Read-write memory; Solid state circuits; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1983 IEEE International
Conference_Location :
New York, NY, USA
Type :
conf
DOI :
10.1109/ISSCC.1983.1156440
Filename :
1156440
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2876028
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