Title :
Thermal characterization of vertically-oriented carbon nanotubes on silicon
Author :
Hu, Xuejiao ; Padilla, Antonio A. ; Xu, Jun ; Fisher, Timothy S. ; Goodson, Kenneth E.
Author_Institution :
Dept. of Mech. Eng., Stanford Univ., CA, USA
Abstract :
An exploratory thermal interface structure, made of vertically oriented carbon nanotubes directly grown on a silicon substrate, has been thermally characterized using a 3-omega method. The effective thermal conductivities of the CNT sample, including the effects of voids, are found to be 74 W/m·K to 83 W/m·K in the temperature range of 295K to 323K, one order higher than that of the best thermal greases or phase change materials. This suggests that the vertically oriented CNT potentially can be a promising next-generation thermal interface solution. However, fairly large thermal resistances were observed at the interfaces between the CNT samples and the experimental contact. Minimizing these contact resistances is critical for the application of these materials.
Keywords :
carbon nanotubes; nanotechnology; silicon; thermal conductivity; thermal management (packaging); thermal resistance; 295 to 323 K; 3-omega method; CNT sample; contact resistances; effective thermal conductivities; next-generation thermal interface; silicon substrate; thermal resistances; vertically oriented carbon nanotubes; voids; Bridge circuits; Carbon nanotubes; Conducting materials; Electric resistance; Electronic packaging thermal management; Resistance heating; Silicon; Thermal conductivity; Thermal management; Thermal resistance;
Conference_Titel :
Semiconductor Thermal Measurement and Management Symposium, 2005 IEEE Twenty First Annual IEEE
Print_ISBN :
0-7803-8985-9
DOI :
10.1109/STHERM.2005.1412194
