Title :
Two-resistor compact modeling for multiple die and multi-chip packages
Author :
Garcia, Enrico A. ; Chiu, Chia-Pin
Author_Institution :
Intel Technol. Philippines, Inc, Cavite, Philippines
Abstract :
Compact thermal models have been extremely valuable in the quick and simple analysis of electronic packages because of their simplicity in implementation and minimal computational resource requirement. The recent trends in the market resulted in an increasingly high level of complexity in electronic package design and thus the need for a simplistic approach to routine analysis. The key challenge has always been the derivation of highly accurate compact models. This paper presents detailed analysis of the two-resistance compact models for prediction of the thermal performance of stacked-die chip-scale packages. The compact models are compared to the detailed model under different boundary condition scenarios: still air environment (JESD51-2), ring cold plate test (JESD51-8), the top cold plate test, and a cell phone mock-up environment. Results of the analyses show good correlation between the two-resistance models and the detailed multi-die stacked packages considered. A representative four-resistance model for a two-package stack technology has been demonstrated to provide accurate results in different environments.
Keywords :
chip scale packaging; integrated circuit modelling; thermal management (packaging); thermal resistance; boundary conditions; cell phone environment; compact thermal models; four-resistance model; multichip packages; multiple die packages; ring cold plate test; stacked-die chip-scale packages; still air environment; top cold plate test; two-package stack technology; two-resistor compact modeling; Chip scale packaging; Cold plates; Contact resistance; Electronic packaging thermal management; Immune system; Surface resistance; Temperature; Testing; Thermal conductivity; Thermal resistance;
Conference_Titel :
Semiconductor Thermal Measurement and Management Symposium, 2005 IEEE Twenty First Annual IEEE
Print_ISBN :
0-7803-8985-9
DOI :
10.1109/STHERM.2005.1412200