Title :
Near term application for GaAs digital ICs
Author :
Wisseman, W. ; Frensley, William
Author_Institution :
Texas Instruments Inc., Dallas, TX, USA
Abstract :
Gallium arsenide digital ICs have demonstrated speeds well into the gigahertz region, but have yet to approach the levels of functional complexity achieved with silicon. This panel will assess the level of complexity that will be routinely achieved in GaAs during the next two to three years and examine how such ICs can be effectively employed in systems. From the designer´s point of view the questions to be considered include the types of circuits being designed and produced in prototype quantities, and the expected performance of these circuits. From the designer´s point of view, the question is whether it is possible to partition the high-speed parts of a system into a few medium scale functions, or will the benefits of high-speed ICs only to be realized when it is possible to construct an entire system in GaAs (and preferably on one chip)?
Keywords :
Chip scale packaging; Circuit testing; Design optimization; Electron devices; FETs; Gallium arsenide; Instruments; Logic devices; Manufacturing; Signal design;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1983 IEEE International
Conference_Location :
New York, NY, USA
DOI :
10.1109/ISSCC.1983.1156468