DocumentCode :
2876562
Title :
A 80ns 64K DRAM
Author :
Mohsen, A. ; Madland, P. ; Simonsen, C. ; Hamdy, E. ; King, Grant W. ; McCollum, John ; Wood, Alan
Author_Institution :
Intel Corp., Aloha, OR, USA
Volume :
XXVI
fYear :
1983
fDate :
23-25 Feb. 1983
Firstpage :
102
Lastpage :
103
Abstract :
A 154 mil2NMOS 64K DRAM with 80ns row access and 65ns fast page mode cycle time, affording low SER (≪ 10 Fits at 1μs cycle), will be repoorted. A conventional 77μm2one-transistor cell used 150Å capacitor oxide and double field oxidation to reduce birds beak.
Keywords :
Capacitance; Charge measurement; Circuits; Clocks; Current measurement; Current supplies; Delay; Fuses; Plastic packaging; Random access memory;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1983 IEEE International
Conference_Location :
New York, NY, USA
Type :
conf
DOI :
10.1109/ISSCC.1983.1156471
Filename :
1156471
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2876562
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