Electrothermal simulations of silicon carbide current limiting devices

Author

Planson, D. ; Chante, J.P. ; Lazar, M. ; Brosselard, P. ; Raynaud, C. ; Tournier, D. ; Locatelli, M.L. ; Nallet, F.

Author_Institution

Centre de Genie Electrique de Lyon, INSA de Lyon, Villeurbanne, France

Volume

2

fYear

2003

fDate

10-12 Dec. 2003

Firstpage

1135

Abstract

SiC is a semiconductor material that could satisfy the requirements of electrical protective devices. This work presents two devices as current limiters for serial protection application. The first device structure is a vertical power MOSFET-like with an existing N channel. The second is a LVJET with buried p-wells and an additional gate electrode. Their electrical performances were simulated with ISE TCAD tools. A study of their electrothermal behavior is presented, demonstrating the SiC superiority over silicon with regards to this field.

Keywords

fault current limiters; junction gate field effect transistors; power MOSFET; power electronics; semiconductor device models; silicon compounds; technology CAD (electronics); wide band gap semiconductors; SiC; TCAD tools; electrical protective devices; electrothermal simulations; gate electrode; junction field effect transistor; lateral VJFET; metaloxide semiconductor field effect transistor; serial protection application; silicon carbide current limiting devices; technology computer aided design; vertical power MOSFET; Current limiters; Electrodes; Electrothermal effects; Protection; Semiconductor materials; Semiconductor process modeling; Silicon carbide; Temperature; Thermal conductivity; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Industrial Technology, 2003 IEEE International Conference on

Print_ISBN

0-7803-7852-0

Type

conf

DOI

10.1109/ICIT.2003.1290823

Filename

1290823