Title :
A 19.7-21.7GHz amplifier
Author :
Kennan, W. ; Chye, P. ; Huang, Chao ; Pardo, M.
Author_Institution :
Avantek, Inc., Santa Clara, CA, USA
Abstract :
A 19.7-21.7 GaAs FET amplifier with a nominal 3dB noise figure, 20dB gain and 1.5:1 maximum VSWR, in a container less than 1" long, will be discussed.
Keywords :
Circuit noise; Fixtures; Gallium arsenide; Impedance matching; Microwave FETs; Microwave devices; Noise figure; Noise measurement; Radio frequency; Testing;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1983 IEEE International
Conference_Location :
New York, NY, USA
DOI :
10.1109/ISSCC.1983.1156476
