Title :
A 2.2dB NF 30-1700MHz feedback amplifier
Author :
Nishiuma, M. ; Katsu, S. ; Nambu, S. ; Hagio, M. ; Kano, G.
Author_Institution :
Matsushita Semiconductor Laboratory, Osaka, Japan
Abstract :
A shunt feedback GaAs amplifier with power dissipation as low as 200mW, gain of 28dB and NF of 2.2dB, obtained over a frequency range of 30 1700MHz, will be described.
Keywords :
Broadband amplifiers; FETs; Feedback amplifiers; Gallium arsenide; Impedance; Low-noise amplifiers; Noise measurement; Radiofrequency amplifiers; Resistors; VHF circuits;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1983 IEEE International
Conference_Location :
New York, NY, USA
DOI :
10.1109/ISSCC.1983.1156478
