DocumentCode :
2876742
Title :
A 5V-only EEPROM with internal program/erase control
Author :
Lancaster, Adam ; Johnstone, Ben ; Chritz, J. ; Talbot, G. ; Wooten, D.
Author_Institution :
Inmos Corp., Colorado Springs, CO, USA
Volume :
XXVI
fYear :
1983
fDate :
23-25 Feb. 1983
Firstpage :
164
Lastpage :
165
Abstract :
An 8K×8 EEPROM, using double-poly, silicon gate, nitrox technology, will be described. A 176μm2cell size has been achieved with 3μ design rules. Internal high voltage generation and program/erase control provides 5V-only external interfacing.
Keywords :
Art; Circuits; Clocks; EPROM; Latches; Parallel programming; Silicon; Springs; Timing; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1983 IEEE International
Conference_Location :
New York, NY, USA
Type :
conf
DOI :
10.1109/ISSCC.1983.1156482
Filename :
1156482
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2876742
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