Title :
Review on induced CDM-ESD test methodologies for flash memory device
Author :
Seong, Law Che ; Seng, Yeoh Lai ; Edumban, Kaneasan ; Chuan, Lee Meng ; Kean, Steven Fan Choo
Author_Institution :
Phase II, Spansion (Penang) Sdn. Bhd., Bayan Lepas, Malaysia
Abstract :
During CDM-ESD test, misalignment may occur between the discharge pin and the DUT terminal, especially when the package size shrinks down. We investigated the effect of top ball touch (non-misaligned) and side ball touch (misaligned) on the electrical characteristics of memory devices. The experimental data were analyzed using statistical hypothesis tests and supported by the physics theory of Gauss´ Law. We also studied the impact of Mylar dielectric film on the device performance.
Keywords :
electrostatic discharge; flash memories; statistical analysis; DUT terminal; Gauss law; charged device model; discharge pin; electrical characteristics; electrostatic discharge; flash memory device; induced CDM-ESD test methodologies; mylar dielectric film; physics theory; side ball touch; statistical hypothesis tests; top ball touch; Dielectrics; Discharges; Electric fields; Electrostatic discharge; Electrostatics; Performance evaluation; Stress;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2011 18th IEEE International Symposium on the
Conference_Location :
Incheon
Print_ISBN :
978-1-4577-0159-7
Electronic_ISBN :
1946-1542
DOI :
10.1109/IPFA.2011.5992714
