Title :
A study on off-state leakage current characteristics of asymmetric-metal—oxide—semiconductor field-effect transistors
Author :
Kwon, Seokil ; Choi, Byoungseon ; Kuh, Hyung-Suk ; Park, Hyunae ; Choi, Byoungdeok
Author_Institution :
Sch. of Inf. & Commun. Eng., Sungkyunkwan Univ., Suwon, South Korea
Abstract :
In this study, we extract the off-state current component from the asymmetric transistors in short channel 40 nm DRAM. Through a quantitative comparison of λ(DIBL coefficient), we explained by differences in deep high doped drain(nλ=0.1576) and shallow low doped drain(nλ = 0.0168) of off-stat current.
Keywords :
DRAM chips; MOSFET; leakage currents; DIBL coefficient; DRAM; asymmetric metal oxide semiconductor field effect transistors; deep high doped drain; off state leakage current characteristics; shallow low doped drain; size 40 nm; Junctions; Logic gates; MOSFETs; Random access memory; Subthreshold current;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2011 18th IEEE International Symposium on the
Conference_Location :
Incheon
Print_ISBN :
978-1-4577-0159-7
Electronic_ISBN :
1946-1542
DOI :
10.1109/IPFA.2011.5992715
