Title :
Optical degradation of white GaN-based light emitting diodes stressed under DC current and temperatures
Author :
Jung, E. ; Kim, H.
Author_Institution :
Semicond. Phys. Res. Center, Chonbuk Nat. Univ., Jeonju, South Korea
Abstract :
The optical degradation of white GaN-based light-emitting diodes stressed under dc current and temperatures were investigated. Rapid optical degradation accompanied with the change of chromatic properties and the evolution of leakage currents was attributed to the darkening of packaged materials and generation of defects.
Keywords :
III-V semiconductors; leakage currents; light emitting diodes; DC current; GaN; chromatic property; defect generation; leakage current; packaged material darkening; rapid optical degradation; white GaN-based light emitting diode; Aging; Degradation; Light emitting diodes; Optical device fabrication; Stress; Temperature; Temperature measurement;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2011 18th IEEE International Symposium on the
Conference_Location :
Incheon
Print_ISBN :
978-1-4577-0159-7
Electronic_ISBN :
1946-1542
DOI :
10.1109/IPFA.2011.5992719
