• DocumentCode
    2876853
  • Title

    Optical degradation of white GaN-based light emitting diodes stressed under DC current and temperatures

  • Author

    Jung, E. ; Kim, H.

  • Author_Institution
    Semicond. Phys. Res. Center, Chonbuk Nat. Univ., Jeonju, South Korea
  • fYear
    2011
  • fDate
    4-7 July 2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The optical degradation of white GaN-based light-emitting diodes stressed under dc current and temperatures were investigated. Rapid optical degradation accompanied with the change of chromatic properties and the evolution of leakage currents was attributed to the darkening of packaged materials and generation of defects.
  • Keywords
    III-V semiconductors; leakage currents; light emitting diodes; DC current; GaN; chromatic property; defect generation; leakage current; packaged material darkening; rapid optical degradation; white GaN-based light emitting diode; Aging; Degradation; Light emitting diodes; Optical device fabrication; Stress; Temperature; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits (IPFA), 2011 18th IEEE International Symposium on the
  • Conference_Location
    Incheon
  • ISSN
    1946-1542
  • Print_ISBN
    978-1-4577-0159-7
  • Electronic_ISBN
    1946-1542
  • Type

    conf

  • DOI
    10.1109/IPFA.2011.5992719
  • Filename
    5992719
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2876853