• DocumentCode
    2876876
  • Title

    The Microstructure and State of Stress of Sn Thin Films after Post-Plating Annealing: An Explanation for the Suppression of Whisker Formation?

  • Author

    Sobiech, M. ; Welzel, U. ; Schuster, Robert ; Mittemeijer, E.J. ; Hugel, W. ; Seekamp, A. ; Muller, V.

  • Author_Institution
    Max Planck Inst. for Metals Res., Stuttgart
  • fYear
    2007
  • fDate
    May 29 2007-June 1 2007
  • Firstpage
    192
  • Lastpage
    197
  • Abstract
    The post-plating annealing (´post-bake´ treatment, annealing at 150degC for 1 h) of pure matte Sn thin films on Cu-based substrates is known to be an effective whisker mitigation treatment. The microstructure and the stress state of Sn thin films on Cu-substrates produced with and without a ´post-bake´ treatment have been investigated using scanning electron and focused ion beam microscopy (SEM & FIB), X-ray photoelectron spectroscopy (XPS) and ageing time and depth-dependent X-ray diffraction (XRD) stress analyses. A comparison of the measured stress-depth gradients in the near-surface regions of the Sn thin films produced with and without ´post-bake´ treatment indicates differences that might provide a plausible explanation for the observed long-term resistance against whisker growth of Sn thin films subjected to a ´post-bake´ treatment. In specimens subjected to a ´post-bake´ treatment, an almost depth-independent tensile stress state prevails in the surface region even after prolonged ageing.
  • Keywords
    X-ray diffraction; X-ray photoelectron spectra; ageing; annealing; crystal microstructure; focused ion beam technology; metallic thin films; scanning electron microscopy; stress analysis; tin; whiskers (crystal); FIB; SEM; Sn; X-ray photoelectron spectroscopy; XPS; XRD; ageing time; annealing; depth-dependent X-ray diffraction; depth-independent tensile stress state; focused ion beam microscopy; long-term resistance; microstructure; post-bake treatment; post-plating annealing; scanning electron microscopy; stress analyses; stress-depth gradients; temperature 150 C; time 1 h; whisker growth; whisker mitigation treatment; Aging; Annealing; Electron beams; Ion beams; Microstructure; Photoelectron microscopy; Scanning electron microscopy; Stress; Tin; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference, 2007. ECTC '07. Proceedings. 57th
  • Conference_Location
    Reno, NV
  • ISSN
    0569-5503
  • Print_ISBN
    1-4244-0985-3
  • Electronic_ISBN
    0569-5503
  • Type

    conf

  • DOI
    10.1109/ECTC.2007.373797
  • Filename
    4249883