Geometric-component modeling in charge-pumping technique

A semi-analytical-model is proposed to predict the geometric component in charge pumping (CP) measurements for transistors. It is based on contributing of active CP-area and low-level voltage (V_L) of the gate signal, thermal diffusion, drift field, and self-induced drift field. The calculated I_CP-V_L characteristics with geometric component model are found in good correlation with the experimental I_CP-V_L data and are more accurate than the calculated CP without geometric component. This modeling approach can be extended for MOSFET stress reliability evaluation such as negative bias temperature instability (NBTI) and radiation degradations.