Title :
Geometric-component modeling in charge-pumping technique
Author :
Djezzar, B. ; Tahi, H. ; Benabdelmoumen, A.
Author_Institution :
Microelectron. & Nanotechnol. Div., CDTA, Algiers, Algeria
Abstract :
A semi-analytical-model is proposed to predict the geometric component in charge pumping (CP) measurements for transistors. It is based on contributing of active CP-area and low-level voltage (VL) of the gate signal, thermal diffusion, drift field, and self-induced drift field. The calculated ICP-VL characteristics with geometric component model are found in good correlation with the experimental ICP-VL data and are more accurate than the calculated CP without geometric component. This modeling approach can be extended for MOSFET stress reliability evaluation such as negative bias temperature instability (NBTI) and radiation degradations.
Keywords :
MOSFET; charge measurement; geometry; semiconductor device reliability; thermal diffusion; CP measurement; MOSFET stress reliability evaluation; NBTI; charge-pumping technique; gate signal; geometric-component modeling; negative bias temperature instability; radiation degradations; self-induced drift field; thermal diffusion; transistors; Charge pumps; Current measurement; Data models; Logic gates; MOSFET circuits; Reliability; Transistors;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2011 18th IEEE International Symposium on the
Conference_Location :
Incheon
Print_ISBN :
978-1-4577-0159-7
Electronic_ISBN :
1946-1542
DOI :
10.1109/IPFA.2011.5992720
