DocumentCode :
2876947
Title :
Are static RAM techniques converging?
Author :
Foss, R.
Author_Institution :
MOSAID Technologies Inc., Ontario, Canada
Volume :
XXVI
fYear :
1983
fDate :
23-25 Feb. 1983
Firstpage :
220
Lastpage :
221
Abstract :
Static RAMs have been divisible into low power, but expensive CMOS, medium speed lower cost NMOS, and high speed applications, where MOS has been trying to catch up to with bipolar. The distinctions are blurring. Panelists will assess which of the present competing alternatives will remain distinct and which will converge in future technologies.
Keywords :
CMOS process; CMOS technology; Clocks; DRAM chips; Engineering management; Memory management; Random access memory; Read-write memory; Research and development management; Technology management;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1983 IEEE International
Conference_Location :
New York, NY, USA
Type :
conf
DOI :
10.1109/ISSCC.1983.1156496
Filename :
1156496
Link To Document :
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