• DocumentCode
    2876964
  • Title

    Time Resolved Imaging at low power supply on 45nm technology

  • Author

    Bascoul, G. ; Perdu, P. ; Celi, G. ; Dudit, S. ; Lewis, D.

  • Author_Institution
    DCT/AQ/LE, CNES, Toulouse, France
  • fYear
    2011
  • fDate
    4-7 July 2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Time Resolved Imaging (TRI) allows real time imaging of transitions in CMOS gates. CMOS Technology trends has challenged this technique. Power Supply decrease has induced a strong reduction of photon emission related to MOS saturation mode and shifted emission to the infrared. In this paper we demonstrate the ability of new time resolved detector to overcome these limits allowing TRI of CMOS 45 nm device at low power supply voltage down to 0.7 Volts.
  • Keywords
    CMOS integrated circuits; low-power electronics; CMOS gates; MOS saturation mode; low power supply; photon emission; shifted emission; time resolved detector; time resolved imaging; wavelength 45 nm; CMOS integrated circuits; Detectors; Inverters; Photonics; Power supplies; Signal to noise ratio;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits (IPFA), 2011 18th IEEE International Symposium on the
  • Conference_Location
    Incheon
  • ISSN
    1946-1542
  • Print_ISBN
    978-1-4577-0159-7
  • Electronic_ISBN
    1946-1542
  • Type

    conf

  • DOI
    10.1109/IPFA.2011.5992726
  • Filename
    5992726
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2876964