• DocumentCode
    2877056
  • Title

    A 5V-only E2 PROM using 1.5 µ lithography

  • Author

    Dham, V. ; Oto, D. ; Gudger, K. ; Congwer, G. ; Yaw Hu ; Olund, J. ; Nieh, S.

  • Author_Institution
    Intel Corp., Santa Clara, CA, USA
  • Volume
    XXVI
  • fYear
    1983
  • fDate
    23-25 Feb. 1983
  • Firstpage
    166
  • Lastpage
    167
  • Abstract
    A floating-gate E2PROM technology with 1.5μm design rules used to build a 5V-only 2K×8 E2PROM with a cell size of 270μm2and chip area of 23,000 mil2will be described. Typical memory access is 200ns with 450mW power dissipation.
  • Keywords
    Charge pumps; Driver circuits; Feedback circuits; Feedback loop; Isolation technology; Packaging; Power dissipation; Switched capacitor networks; Temperature; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1983 IEEE International
  • Conference_Location
    New York, NY, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1983.1156502
  • Filename
    1156502
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2877056