Title :
Monte Carlo simulation of carrier dynamics in semiconductors with compositional fluctuations
Author :
Lu, Yen-Cheng ; Tuvshin, Damdin ; Cheng, Yung-Chen ; Yang, Chih-Chung C C
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei
Abstract :
Carrier dynamics in InGaN of compositional fluctuations is studied with Monte Carlo simulation of time-resolved photoluminescence. Clustered structures lead to a minimum in the photon energy-dependent photoluminescence decay time that is consistent with experimental data.
Keywords :
III-V semiconductors; Monte Carlo methods; carrier mobility; indium compounds; photoluminescence; semiconductor quantum wells; wide band gap semiconductors; InGaN; Monte Carlo simulation; clustered structures; compositional fluctuations; photon energy dependent photoluminescence decay time; semiconductor carrier dynamics; time-resolved photoluminescence; Doping; Fluctuations; Gallium nitride; Indium; Lead compounds; Luminescence; Photoluminescence; Power engineering and energy; Quantum wells; Vehicle dynamics; 320.7130 Ultrafast processes in condensed matter, including semiconductors; 320.7150 Ultrafast spectroscopy;
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
DOI :
10.1109/CLEO.2006.4628595
