DocumentCode :
2877109
Title :
Elliptically polarized absorption quantum beats and temperature dependence of electron-spin coherence lifetime in intrinsic GaAs
Author :
Lai, Tianshu ; Teng, Lihua ; Xu, Haihong ; Liu, Xiaodong ; Jiao, Zhongxing ; Wen, Jinhui ; Lin, Weizhu
Author_Institution :
Dept. of Phys., Zhongshan Univ., Guangzhou
fYear :
2006
fDate :
21-26 May 2006
Firstpage :
1
Lastpage :
2
Abstract :
An elliptically polarized absorption quantum-beat spectroscopy is developed and used to observe electron-spin coherence relaxation in an intrinsic bulk GaAs in Voigt geometry. The temperature dependence of electron-spin coherence lifetime is first obtained.
Keywords :
III-V semiconductors; electron spin; gallium arsenide; gallium compounds; light coherence; light polarisation; quantum beat spectroscopy; spectral line breadth; GaAs; Voigt geometry; electron-spin coherence relaxation; elliptically polarized absorption quantum beats; intrinsic bulk galluim arsenide; temperature dependence; Absorption; Gallium arsenide; Laser excitation; Optical polarization; Optical pumping; Optical retarders; Optical saturation; Probes; Spectroscopy; Temperature dependence; (300.6500) Time-resolved spectroscopy; (320.7130) Ultrafast processes in condensed matter;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
Type :
conf
DOI :
10.1109/CLEO.2006.4628596
Filename :
4628596
Link To Document :
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