DocumentCode :
2877114
Title :
A 20GHz high electron mobility transistor amplifier for satellite communications
Author :
Niori, M. ; Saito, Takashi ; Joshin, Kazukiyo ; Mimura, Takashi
Author_Institution :
Avantek, Inc., Santa Clara, CA, USA
Volume :
XXVI
fYear :
1983
fDate :
23-25 Feb. 1983
Firstpage :
198
Lastpage :
199
Abstract :
A 200Hz high electron mobility transistor amplifier with a 3.9dB noise figure and a 30dB gain will be covered.
Keywords :
FETs; Frequency; Gallium arsenide; HEMTs; MODFETs; Noise figure; Satellite communication; Scattering parameters; Semiconductor device measurement; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1983 IEEE International
Conference_Location :
New York, NY, USA
Type :
conf
DOI :
10.1109/ISSCC.1983.1156507
Filename :
1156507
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2877114
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